Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD533/535/537
DESCRIPTION
・With
TO-220C package
・Complement
to type BD534/536/538
・Low
saturation voltage
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
PARAMETER
BD533
V
CBO
Collector-base voltage
BD535
BD537
BD533
V
CEO
Collector-emitter voltage
BD535
BD537
V
EBO
I
C
I
E
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
80
45
60
80
5
8
8
1
50
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT