Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD534/536/538
DESCRIPTION
・With
TO-220C package
・Complement
to type BD533/535/537
・Low
saturation voltage
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
PARAMETER
BD534
V
CBO
Collector-base voltage
BD536
BD538
BD534
V
CEO
Collector-emitter voltage
BD536
BD538
V
EBO
I
C
I
E
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter-
CONDITIONS
VALUE
-45
-60
-80
-45
-60
-80
-5
-8
-8
-1
50
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
