INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
BD650
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -100V(Min)
·High
DC Current Gain
: h
FE
= 750(Min) @I
C
= -3A
·Low
Saturation Voltage
·Complement
to Type BD649
APPLICATIONS
·Designed
for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-120
-100
-5
-8
-12
-0.3
2
UNIT
V
V
V
A
A
A
P
C
W
62.5
150
-65~150
℃
℃
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
2
62.5
UNIT
℃/W
℃/W
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
