Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD675A/677A/679A/681
DESCRIPTION
・With
TO-126 package
・Complement
to type BD676A/678A/680A/682
・DARLINGTON
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
BD675A
BD677A
V
CBO
Collector-base voltage
BD679A
BD681
BD675A
BD677A
V
CEO
Collector-emitter voltage
BD679A
BD681
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
100
5
4
6
0.1
40
150
-65~150
V
A
A
A
W
℃
℃
Open emitter
80
100
45
60
V
CONDITIONS
VALUE
45
60
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
