Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD675A
Collector-emitter
sustaining
voltage
BD677A
I
C
=50mA; I
B
=0
BD679A
BD681
Collector-emitter
saturation voltage
BD675A/677A/679A
BD681
BD675A/677A/679A
BD681
BD675A
Collector
cut-off current
BD677A
BD679A
BD681
BD675A
Collector
cut-off current
BD677A
BD679A
BD681
I
EBO
Emitter cut-off current
BD675A/677A/679A
h
FE
DC current gain
BD681
I
C
=2A; I
B
=40mA
BD675A/677A/679A/681
CONDITIONS
MIN
45
60
TYP.
MAX
UNIT
V
CEO(SUS)
V
80
100
2.8
V
2.5
2.5
V
2.5
V
CEsat
I
C
=1.5A; I
B
=30mA
I
C
=2A ; V
CE
=3V
I
C
=1.5A ; V
CE
=3V
V
CB
=45V; I
E
=0
V
CB
=60V; I
E
=0
V
BE(ON)
Base-emitter
voltage
I
CBO
0.2
V
CB
=80V; I
E
=0
V
CB
=100V; I
E
=0
V
CE
=45V; V
BE
=0
V
CE
=60V; V
BE
=0
0.5
V
CE
=80V; V
BE
=0
V
CE
=100V; V
BE
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=3V
I
C
=1.5A ; V
CE
=3V
750
750
2
mA
I
CEO
mA
mA
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
