Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD675A/677A/679A/681
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD676A/678A/680A/682
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
CONDITIONS
BD676A
BD678A
BD680A
V
CBO
Collector-base voltage
ES
ANG
CH
BD682
BD676A
BD678A
BD680A
BD682
Open emitter
MIC
E
ND
O
OR
UCT
VALUE
-45
-60
-80
-100
-45
-60
UNIT
V
V
CEO
Collector-emitter voltage
Open base
-80
-100
Open collector
-5
-4
-6
-0.1
T
C
=25℃
40
150
-65~150
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
A
W
℃
℃
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
