Inchange Semiconductor
Product Specification
Silicon PNP Darligton Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD675/BD677/BD679
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD676/BD678/BD680
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
BD676
V
CBO
Collector-base voltage
BD678
BD680
BD676
V
CEO
Collector-emitter voltage
BD678
BD680
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-45
-60
-80
-45
-60
-80
-5
-4
-0.1
40
150
-55~150
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
3.13
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
