Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・The
BD707 and BD711are respectively
complement to type BD708 and BD712
APPLICATIONS
・Intented
for use in power linear
and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BD707 BD709 BD711
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
PARAMETER
BD707
V
CBO
Collector-base voltage
BD709
BD711
BD707
V
CEO
Collector-emitter voltage
BD709
BD711
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Total dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
V
60
80
100
5
12
18
5
75
150
-65~150
V
A
A
A
W
℃
℃
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.67
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
