Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD910 BD912
DESCRIPTION
・With
TO-220C package
・Complement
to type BD909 BD911
APPLICATIONS
・Intented
for use in power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
固电
IN
导�½�
半
PARAMETER
CONDITIONS
Open emitter
BD910
Collector-base voltage
BD912
BD910
V
CEO
Collector-emitter voltage
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
ES
ANG
CH
BD912
Open base
ICO
EM
OR
UCT
ND
VALUE
-80
-100
-80
-100
-5
-15
-5
UNIT
V
V
Open collector
V
A
A
W
℃
℃
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
≤25℃
90
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.4
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
