INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
12A
·High
DC Current Gain-h
FE
= 1000(Min)@ I
C
= -5A
·Complement
to Type BDT65/A/B/C
APPLICATIONS
·Designed
for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDT64
Collector-Emitter
Voltage
BDT64A
BDT64B
BDT64C
BDT64
Collector-Emitter
Voltage
BDT64A
BDT64B
BDT64C
V
EBO
I
C
I
CM
I
B
B
BDT64/A/B/C
VALUE
-60
-80
UNIT
V
CER
V
-100
-120
-60
-80
V
-100
-120
-5
-12
-20
-0.5
125
150
-65~150
V
A
A
A
W
℃
℃
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1
UNIT
℃/W
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
