INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
12A
·High
DC Current Gain-h
FE
= 1000(Min)@ I
C
= 5A
·Complement
to Type BDT64/A/B/C
APPLICATIONS
·Designed
for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDT65
Collector-Emitter
Voltage
BDT65A
BDT65B
BDT65C
BDT65
Collector-Emitter
Voltage
BDT65A
BDT65B
BDT65C
V
EBO
I
C
I
CM
I
B
B
BDT65/A/B/C
VALUE
60
80
UNIT
V
CER
V
100
120
60
80
V
100
120
5
12
20
0.5
125
150
-65~150
V
A
A
A
W
℃
℃
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
