INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
12A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= -2.0V(Max.)@ I
C
= -5A
·Complement
to Type BDV65/A/B/C
APPLICATIONS
·Designed
for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDV64
Collector-Base
Voltage
BDV64A
BDV64B
VALUE
-60
-80
UNIT
BDV64/A/B/C
V
CBO
V
CEO
Collector-Emitter
Voltage
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
V
-100
BDV64C
BDV64
-120
-60
BDV64A
BDV64B
-80
V
-100
BDV64C
-120
-5
V
-12
-15
-0.5
125
W
3.5
150
-65~150
℃
℃
A
A
A
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Collector Power Dissipation
@ T
a
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.0
35.7
UNIT
℃/W
℃/W
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
