Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type BDV64/64A/64B/64C
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use in general purpose amplifier
applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDV65/65A/65B/65C
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
BDV65
BDV65A
V
CBO
Collector-base voltage
BDV65B
BDV65C
BDV65
BDV65A
V
CEO
Collector-emitter voltage
BDV65B
BDV65C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
Collector power dissipation
T
a
=25℃
Junction temperature
Storage temperature
3.5
150
-65~150
℃
℃
Open collector
Open base
100
120
5
12
15
0.5
125
W
V
A
A
A
Open emitter
100
120
60
80
V
CONDITIONS
VALUE
60
80
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
