Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDX34
Collector-emitter
sustaining voltage
BDX34A
I
C
=-0.1A, I
B
=0
BDX34B
BDX34C
Collector-emitter
saturation voltage
BDX34/34A
BDX34B/34C
BDX34/34A
V
BE
Base-emitter on voltage
BDX34B/34C
BDX34
I
C
=-3A ; V
CE
=-3V
V
CB
=-45V, I
E
=0
V
CB
=-60V, I
E
=0
V
CB
=-80V, I
E
=0
I
C
=-4A ,I
B
=-8mA
-80
-100
CONDITIONS
MIN
-45
-60
BDX34/A/B/C
TYP.
MAX
UNIT
V
CEO(SUS)
V
V
CEsat
-2.5
I
C
=-3A ,I
B
=-6mA
I
C
=-4A ; V
CE
=-3V
-2.5
V
V
I
CBO
Collector cut-off current
固电
I
CEO
导�½�
半
BDX34A
BDX34B
BDX34C
BDX34
Collector cut-off current
IN
I
EBO
h
FE
HAN
C
BDX34A
BDX34B
ES
G
ND
ICO
EM
V
CB
=-100V, I
E
=0
V
CE
=-22V, I
B
=0
V
CE
=-30V, I
B
=0
V
CE
=-40V, I
B
=0
V
CE
=-50V, I
B
=0
V
EB
=-5V; I
C
=0
OR
UCT
-0.5
-0.2
mA
mA
BDX34C
Emitter cut-off current
BDX34/34A
DC current gain
BDX34B/34C
-5.0
mA
I
C
=-4A ; V
CE
=-3V
750
I
C
=-3A ; V
CE
=-3V
I
F
=-8A
-4.0
V
V
F
Forward diode voltage
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
