Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
DC current gain
・DARLINGTON
・Complement
to type BDX54/A/B/C
APPLICATIONS
・Power
linear and switching applications
・Hammer
drivers,audio amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDX53/A/B/C
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
固电
IN
导�½�
半
PARAMETER
CONDITIONS
BDX53
BDX53A
BDX53B
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
ES
ANG
CH
BDX53C
BDX53
BDX53A
BDX53B
BDX53C
Open emitter
ND
ICO
EM
OR
UCT
VALUE
45
60
80
100
45
60
UNIT
V
Open base
80
100
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
5
8
12
0.2
V
A
A
A
W
℃
℃
T
C
=25℃
60
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
