Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220C package
・High
DC current gain
・DARLINGTON
・Complement
to type BDX53/A/B/C
APPLICATIONS
・Power
linear and switching applications
・Hammer
drivers,audio amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDX54/A/B/C
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
PARAMETER
BDX54
BDX54A
V
CBO
Collector-base voltage
BDX54B
BDX54C
BDX54
BDX54A
V
CEO
Collector-emitter voltage
BDX54B
BDX54C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-100
-5
-8
-12
-0.2
60
150
-65~150
V
A
A
A
W
℃
℃
Open emitter
-80
-100
-45
-60
V
CONDITIONS
VALUE
-45
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
