Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX77
DESCRIPTION
・With
TO-220C package
・Low
saturation voltage
・Complement
to type BDX78
・Wide
area of safe operation
APPLICATIONS
・For
medium power switching and
amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
80
5
8
12
3
60
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
℃/W