INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFQ540
DESCRIPTION
·High
Gain
·High
Output Voltage
·Low
Noise
APPLICATIONS
·Designed
for use in VHF, UHF and CATV amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CES
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
2
V
I
C
Collector Current-Continuous
120
mA
P
C
Collector Power Dissipation
@T
C
=25℃
1.2
W
T
J
Junction Temperature
175
℃
T
stg
Storage Temperature Range
-65~150
℃
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