INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFS520
DESCRIPTION
·Low
Noise Figure
NF = 1.1 dB TYP. @V
CE
= 6 V, I
C
= 5 mA, f = 900 MHz
·High
Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @V
CE
= 6 V, I
C
= 20 mA, f = 1 GHz
APPLICATIONS
·Designed
for wideband applications such as satellite TV
tuners,cellular phones, cordless phones,pagers etc, with
signal frequencies up to 2 GHz.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CES
Collector-Emitter Voltage
R
BE
= 0
15
V
V
EBO
Emitter-Base Voltage
2.5
V
I
C
Collector Current-Continuous
70
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.3
W
T
J
Junction Temperature
175
℃
T
stg
Storage Temperature Range
-65~150
℃
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