INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU208D
DESCRIPTION
·High
Voltage-V
CES
= 1500V(Min.)
·Collector
Current- I
C
= 8.0A
·Built-in
Damper Diode
APPLICATIONS
·Designed
for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
1500
700
10
8.0
15
150
175
-65~175
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
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