INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2508DX
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 700V (Min)
·High
Switching Speed
·Built-in
Damper Diode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
700
7.5
8
15
4
6
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
isc Website:www.iscsemi.cn