Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2525AF
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0,L=25mH
800
V
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=1mA ;I
C
=0
I
C
=8A ;I
B
=1.6 A
7.5
13.5
V
Collector-emitter saturation voltage
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=8A ;I
B
=1.6 A
V
CE
=BV
CES;
V
BE
=0
T
j
=125℃
V
EB
=7.5V; I
C
=0
1.1
1.0
2.0
1.0
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=0.1A ; V
CE
=5V
13
h
FE-2
C
C
DC current gain
I
C
=8A ; V
CE
=5V
I
E
=0; f=1MHz;V
CB
=10V
5
7
9.5
Collector capacitance
145
pF
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
