INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2527AX
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CES
Collector- Emitter Voltage(V
BE
= 0)
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
7.5
V
I
C
I
CM
Collector Current- Continuous
12
A
Collector Current-Peak
30
A
I
B
B
Base Current- Continuous
8
A
I
BM
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
12
A
P
C
45
W
℃
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
