INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU4506AX
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
800
7.5
5
8
3
5
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
