Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508AF
DESCRIPTION
・With
TO-3PFa package
・High
voltage
・High
speed switching
APPLICATIONS
・For
use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
7.5
8
15
4
6
34
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃