Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0
700
V
V
CEsat
V
BEsat
Collector-emitter saturation voltage
I
C
=4.5A; I
B
=2.0A
I
C
=4.5A; I
B
=2.0A
1.0
V
Base-emitter saturation voltage
1.5
V
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
8
I
CES
Collector cut-off current
V
CE
=1500V; V
BE
=0
1.0
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
300
mA
V
F
Diode forward voltage
I
F
=4.0A
2.0
V
f
T
Cob
Transition frequency
I
C
=0.1A ; V
CE
=5V
I
E
=0;V
CB
=10V;f=1MHz
4
MHz
Collector capacitance
125
pF
μs
μs
t
s
Storage time
I
C
=4.5A ; I
B
=1.4A
L
B
=10μH
7
t
f
Fall time
1.0
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
