Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508A
DESCRIPTION
・With
TO-3PN package
・High
voltage
・High
speed switching
APPLICATIONS
・For
use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
固电
IN
导�½�
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
ES
ANG
CH
Open emitter
Open base
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
1200
700
10
8
15
UNIT
V
V
V
A
A
W
℃
℃
Open collector
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
T
C
=25℃
125
150
-65~150
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction case
MAX
1.0
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
