INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BU806
DESCRIPTION
·High
Voltage: V
CEV
= 400V(Min)
·Low
Saturation Voltage-
: V
CE(sat)
= 1.5V(Max)@ I
C
= 5A
APPLICATIONS
·Designed
for use in horizontal deflection circuits in TV’s and
CRT’s.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
400
200
6
8
15
2
60
150
-65~150
UNIT
V
V
V
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.08
70
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
