Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU931P
DESCRIPTION
·With
TO-3PN package
·DARLINGTON
·High
breakdown voltage
APPLICATIONS
·High
ruggedness electronic ignitions.
·High
voltage ignition coil driver
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
·
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current -peak
Base current
Base current -peak
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
5
15
30
1
5
135
175
-65~175
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.1
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
