Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU931T
DESCRIPTION
·With
TO-220C package
·Fast
switching speed
·DARLINGTON
APPLICATIONS
·High
ruggedness electronic ignitions..
·High
voltage ignition coil driver
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (peak)
Base current
Base current
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
5
10
15
1
5
125
175
-65~175
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.2
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
