Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUL381
DESCRIPTION
・With
TO-220C package
・High
voltage capability
・Very
high switching speed
APPLICATIONS
・Designed
for use in lighting
applications and low cost
switch-mode power supplies.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
固电
IN
导�½�
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ES
ANG
CH
Open emitter
Open base
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
800
400
9
5
8
2
4
UNIT
V
V
V
A
A
A
A
W
℃
℃
Open collector
Collector current-Peak (t
p
<5 ms)
Base current
Base current-Peak (t
p
<5 ms)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
70
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.78
UNIT
℃/W