Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV21
DESCRIPTION
・With
TO-3 package
・High
DC current gain@I
C
=12A
・Fast
switching times
・Low
collector saturation voltage
APPLICATIONS
・Designed
for high current,high speed
and high power applications.
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
固电
IN
导�½�
半
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
AG
CH
ON
MIC
E SE
N
CONDITIONS
Open emitter
Open base
Open collector
OR
DUT
VALUE
250
200
7
40
50
8
UNIT
V
V
V
A
A
A
W
℃
℃
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
150
-65~200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
0.7
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
