Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV27
DESCRIPTION
・With
TO-220C package
・Low
collector saturation voltage
・Fast
switching speed
APPLICATIONS
・For
use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
固电
IN
导�½�
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
ES
ANG
CH
Open emitter
Open base
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
240
120
7
12
20
4
6
UNIT
V
V
V
A
A
A
A
W
℃
℃
Open collector
Collector current (peak)
Base current
Base current (peak)
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
85
175
-65~175
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.76
UNIT
℃/W