INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·High
Voltage Capability
·High
Current Capability
·Fast
Switching Speed
APPLICATIONS
Designed for high-voltage,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ulary suited for line-operated swtchmode applications such
as:
·Switching
regulators
·Inverters
·Solenoid
and relay drivers
·Motor
controls
·Deflection
circuits
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
B
BUV48A
PARAMETER
Collector-Emitter Voltage
(V
BE
= -1.5V)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
450
7
15
30
5
20
150
175
-65~175
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
