Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・High
voltage,fast speed
・Low
collector saturation voltage
APPLICATIONS
・Specially
intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
固电
IN
导�½�
半
PARAMETER
CONDITIONS
Open emitter
BUW12
Collector-base voltage
BUW12A
BUW12
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
CH
BUW12A
MIC
E SE
Open base
Open collector
ND
O
OR
UCT
VALUE
850
1000
400
450
9
8
20
4
UNIT
V
V
V
A
A
A
W
℃
℃
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
125
150
-65~175
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.2
UNIT
℃/W