INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUX10
DESCRIPTION
·Low
Collector Saturation Voltage-
·High
Switching Speed
·High
Current Current Capability
APPLICATIONS
·Motor
control
·Linear
and switching industrial equipment
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
V
BE
= -1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
160
160
125
7
25
30
5
150
200
-65~200
UNIT
V
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
