Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
D44H8
DESCRIPTION
・With
TO-220C package
・Fast
switching speeds
・Low
collector saturation voltage
APPLICATIONS
・For
general purpose power amplification
and switching regulators,converters and
power amplifiers applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25℃
Total power dissipation
T
a
=25℃
Junction temperature
Storage temperature
1.67
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
5
10
20
50
W
UNIT
V
V
V
A
A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
