INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
CONDITIONS
V
GS
= 0; I
D
= 0.25mA
V
DS
= V
GS
; I
D
= 0.25mA
V
GS
= 10V; I
D
= 4.5A
V
GS
=
±30V;V
DS
= 0
V
DS
= 200V; V
GS
= 0
I
F
=9A; V
GS
= 0
MIN
200
2
IRF630A
MAX
UNIT
V
4
0.4
±100
10
1.5
V
Ω
nA
uA
V
isc Website:www.iscsemi.cn