MOSFET
INCHANGE
IRF730
N-channel mosfet transistor
Features
・With
TO-220 package
・Simple
drive requirements
・Fast
switching
・V
DSS
=400V; R
DS(ON)
≤1.0Ω;I
D
=5.5A
・1.gate
2.drain 3.source
123
Absolute Maximum Ratings Tc=25℃
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
PARAMETER
Drain-source voltage (V
GS
=0)
Gate-source voltage
Drain Current-continuous@ T
C
=25℃
RATING
400
±20
5.5
74
UNIT
V
V
A
W
SYMBOL
ES
Electrical Characteristics Tc=25℃
ANG
CH
IN
Storage temperature
PARAMETER
固电
Total Dissipation@T
C
=25℃
Max. Operating Junction temperature
导�½�
半
150
-65~150
ON
MIC
E
℃
℃
CONDITIONS
OR
DUT
TO-220
MIN
MAX
UNIT
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-stage resistance
Gate source leakage current
Zero gate voltage drain current
Diode forward voltage
V
GS
=0; I
D
=0.25mA
V
DS
= V
GS
; I
D
=0.25mA
V
GS
=10V; I
D
=3.3A
V
GS
=
±20V
;V
DS
=0
V
DS
=400V; V
GS
=0
I
F
=5.5A; V
GS
=0
400
2
4
1.0
±100
V
V
Ω
nA
uA
V
25
1.6
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
