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IRF840 参数 Datasheet PDF下载

IRF840图片预览
型号: IRF840
PDF下载: 下载PDF文件 查看货源
内容描述: ISC N沟道MOSFET晶体管 [isc N-Channel Mosfet Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 119 K
品牌: ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
 浏览型号IRF840的Datasheet PDF文件第2页  
INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
IRF840
·FEATURES
·Drain
Current –I
D
=8.0A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 500V(Min)
·Static
Drain-Source On-Resistance
: R
DS(on)
= 0.85Ω(Max)
·DESCRITION
·Designed
for high voltage, high speed switching power applic-
ations such as switching regulators, converters, solenoid and
relay drivers.
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
j
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
500
±20
8
32
125
150
-55~150
UNIT
V
V
A
A
W
·THERMAL
CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.0
62.5
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn