INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
IRF840
·FEATURES
·Drain
Current –I
D
=8.0A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 500V(Min)
·Static
Drain-Source On-Resistance
: R
DS(on)
= 0.85Ω(Max)
·DESCRITION
·Designed
for high voltage, high speed switching power applic-
ations such as switching regulators, converters, solenoid and
relay drivers.
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
j
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
500
±20
8
32
125
150
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL
CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.0
62.5
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn