INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
MJ1000
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V(Min.)
·High
DC Current Gain-
: h
FE
= 1000(Min.)@I
C
= 3A
·Low
Collector Saturation Voltage-
: V
CE (sat)
= 2.0V(Max.)@ I
C
= 3A
APPLICATIONS
·Designed
for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continunous
Base Current-Continunous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
60
60
5
10
0.1
90
200
-55~+200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.94
UNIT
℃/W
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
