INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
MJ11033
DESCRIPTION
·Collector-Emitter
Breakdown Voltage
: V
(BR)CEO
= -120V(Min.)
·High
DC Current Gain-
: h
FE
= 1000(Min.)@I
C
= -25A
: h
FE
= 400(Min.)@I
C
= -50A
·Complement
to Type MJ11032
APPLICATIONS
·Designed
for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
Base Current-Continunous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-120
-120
-5
-50
-100
-2
300
200
-55~+200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.584
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
