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MJ11029 参数 Datasheet PDF下载

MJ11029图片预览
型号: MJ11029
PDF下载: 下载PDF文件 查看货源
内容描述: ISC的硅PNP达林顿功率晶体管 [isc Silicon PNP Darlington Power Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 53 K
品牌: ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
 浏览型号MJ11029的Datasheet PDF文件第2页  
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
MJ11029
DESCRIPTION
·Collector-Emitter
Breakdown Voltage
: V
(BR)CEO
= -60V(Min.)
·High
DC Current Gain-
: h
FE
= 1000(Min.)@I
C
= -25A
: h
FE
= 400(Min.)@I
C
= -50A
·Complement
to Type MJ11028
APPLICATIONS
·Designed
for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
Base Current-Continunous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-60
-60
-5
-50
-100
-2
300
200
-55~+200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.584
UNIT
℃/W
isc Website:www.iscsemi.cn