INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJ12005
DESCRIPTION
·
Collector-Emitter Voltage-
V
CEX
= 1500V
·Safe
Operation Area
APPLICATIONS
·Designed
for use in deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CEX
V
EBO
I
C
I
B
B
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
1500
5
8
4
12
100
150
-65~150
UNIT
V
V
A
A
A
W
℃
℃
I
E
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
