Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type MJ15023; MJ15025
・Excellent
safe operating area
・High
DC current gain
h
FE
= 15 (Min) @ I
C
= 8 Adc
APPLICATIONS
・Designed
for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
MJ15022 MJ15024
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
MJ15022
Collector-base voltage
MJ15024
MJ15022
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
MJ15024
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
250
5
16
30
5
250
150
-65~200
V
A
A
A
W
℃
℃
Open emitter
400
200
V
CONDITIONS
VALUE
350
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.70
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
