INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlingtion Power Transistor
MJ2500
DESCRIPTION
·Built-in
Base-Emitter Shunt Resistors
·High
DC current gain-
h
FE
= 1000 (Min) @ I
C
= -5A
·Collector-Emitter
Breakdown Voltage-
V
(BR)CEO
= -60V(Min)
·Complement
to type MJ3000
APPLICATIONS
·Designed
for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
C
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-60
-60
-5
-10
-0.2
150
200
-55~200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
