Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Respectively
complement to type
MJ4030/4031/4032
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use as output devices in complementary
general purpose amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
MJ4033/4034/4035
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
MJ4033
V
CBO
Collector-base voltage
MJ4034
MJ4035
MJ4033
V
CEO
Collector-emitter voltage
MJ4034
MJ4035
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
60
80
100
5
16
20
0.5
150
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
