INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJ802
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 25-100@I
C
= 7.5A
·Excellent
Safe Operating Area
·Complement
to Type MJ4502
APPLICATIONS
·Designed
for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
100
90
4
30
7.5
200
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.875
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
