Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type MJE15028/30
・High
transition frequency
・DC
Current Gain Specified to 4.0 Amperes
h
FE
= 40 (Min) @ I
C
=- 3.0 Adc
h
FE
= 20 (Min) @ I
C
= -4.0 Adc
APPLICATIONS
・Designed
for use as high–frequency
drivers in audio amplifiers
.
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
MJE15031
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
T
a
=25℃
Total power dissipation
T
C
=25℃
Junction temperature
Storage temperature
50
150
-65~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-8
-16
-2
2
W
UNIT
V
V
V
A
A
A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance ; junction to case
Thermal resistance , junction to ambient
MAX
2.5
62.5
UNIT
℃/W
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
