INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
DESCRIPTION
·Collector–Emitter
Sustaining Voltage—
: V
CEO(SUS)
= -60V
·DC
Current Gain—
: h
FE
= 30(Min) @ I
C
= -0.5 A
= 12(Min) @ I
C
= -1.5 A
·Complement
to Type MJE181
APPLICATIONS
·Low
power audio amplifier applications.
·Low
current high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
MJE171
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Collector Power Dissipation
T
a
=25℃
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-80
-60
-7
-3
-6
-1
1.5
UNIT
V
V
V
A
A
A
P
C
W
12.5
150
-65~150
℃
℃
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
10
83.4
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
